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Part Number Overview
Manufacturer Part Number
STP8NM60
Description
MOSFET N-CH 650V 8A TO220AB
Detailed Description
N-Channel 650 V 8A (Tc) 100W (Tc) Through Hole TO-220
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
STP8NM60 Models
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
MDmesh™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
STP8N
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
1026-STP8NM60
497-5397-5
STP8NM60-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STP8NM60
Documents & Media
Datasheets
1(STD5NM60, STB8NM60, STP8NM60)
HTML Datasheet
1(STD5NM60, STB8NM60, STP8NM60)
EDA Models
1(STP8NM60 Models)
Quantity Price
-
Substitutes
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