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Part Number Overview
Manufacturer Part Number
MPSH10
Description
RF TRANS NPN 25V 650MHZ
Detailed Description
RF Transistor NPN 25V 650MHz 350mW Through Hole
Manufacturer
NTE Electronics, Inc
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
NTE Electronics, Inc
Series
-
Package
Bag
Product Status
Active
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
25V
Frequency - Transition
650MHz
Noise Figure (dB Typ @ f)
-
Gain
-
Power - Max
350mW
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 4mA, 10V
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/NTE Electronics, Inc MPSH10
Documents & Media
Datasheets
1(MPSH10 Datasheet)
Environmental Information
()
HTML Datasheet
1(MPSH10 Datasheet)
Quantity Price
Quantity: 250
Unit Price: $0.141
Packaging: Bag
MinMultiplier: 50
Packaging: Bag
MinMultiplier: 50
Quantity: 200
Unit Price: $0.144
Packaging: Bag
MinMultiplier: 50
Packaging: Bag
MinMultiplier: 50
Quantity: 150
Unit Price: $0.153
Packaging: Bag
MinMultiplier: 50
Packaging: Bag
MinMultiplier: 50
Quantity: 100
Unit Price: $0.161
Packaging: Bag
MinMultiplier: 50
Packaging: Bag
MinMultiplier: 50
Quantity: 50
Unit Price: $0.17
Packaging: Bag
MinMultiplier: 50
Packaging: Bag
MinMultiplier: 50
Substitutes
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