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Part Number Overview
Manufacturer Part Number
TRS3E65F,S1Q
Description
DIODE SIL CARB 650V 3A TO220-2L
Detailed Description
Diode 650 V 3A Through Hole TO-220-2L
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
24 Weeks
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tube
Product Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
3A
Voltage - Forward (Vf) (Max) @ If
1.6 V @ 3 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
20 µA @ 650 V
Capacitance @ Vr, F
12pF @ 650V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2L
Operating Temperature - Junction
175°C (Max)
Base Product Number
TRS3E65
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.10.0080
Other Names
TRS3E65F,S1Q(S
264-TRS3E65FS1Q
Category
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Toshiba Semiconductor and Storage TRS3E65F,S1Q
Documents & Media
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Quantity Price
Quantity: 10000
Unit Price: $0.8
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MinMultiplier: 1
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Quantity: 5000
Unit Price: $0.82739
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Quantity: 2000
Unit Price: $0.85971
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Quantity: 1000
Unit Price: $0.90496
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Quantity: 500
Unit Price: $1.06656
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Quantity: 100
Unit Price: $1.2605
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Quantity: 50
Unit Price: $1.532
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MinMultiplier: 1
Quantity: 1
Unit Price: $1.91
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Substitutes
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