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GA1L4M-T2-A
Part Number Overview
Manufacturer Part Number
GA1L4M-T2-A
Description
TRANS PREBIAS NPN 50V 0.1A SC70
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount SC-70
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
2,664
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Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
47 kOhms
Resistor - Emitter Base (R2)
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
95 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
200mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Power - Max
150 mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
SC-70
Base Product Number
GA1L4M
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
2156-GA1L4M-T2-A-RE
RENRNSGA1L4M-T2-A
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Renesas Electronics Corporation GA1L4M-T2-A
Documents & Media
Datasheets
1(GA1L4M-T2-A)
Quantity Price
Quantity: 2664
Unit Price: $0.11
Packaging: Bulk
MinMultiplier: 2664
Substitutes
Part No. : PDTC144EU,115
Manufacturer. : Nexperia USA Inc.
Quantity Available. : 78,219
Unit Price. : $0.19000
Substitute Type. : Direct
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