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Part Number Overview
Manufacturer Part Number
IPP06CN10LG
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 100 V 100A (Tc) 214W (Tc) Through Hole PG-TO220-3-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
208
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™ 2
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs
124 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
11900 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
214W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-IPP06CN10LG
IFEINFIPP06CN10LG
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPP06CN10LG
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 208
Unit Price: $1.45
Packaging: Bulk
MinMultiplier: 208
Packaging: Bulk
MinMultiplier: 208
Substitutes
-