China
Spain
Rusia
Italy
Germany30A01C-TB-E
Part Number Overview
Manufacturer Part Number
30A01C-TB-E
Description
PNP SILICON TRANSISTOR
Detailed Description
Bipolar (BJT) Transistor PNP 30 V 300 mA 520MHz 300 mW Surface Mount 3-CP
Manufacturer
Sanyo
Standard LeadTime
Edacad Model
Standard Package
3,806
Supplier Stocks
Technical specifications
Mfr
Sanyo
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
300 mA
Voltage - Collector Emitter Breakdown (Max)
30 V
Vce Saturation (Max) @ Ib, Ic
220mV @ 5mA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 10mA, 2V
Power - Max
300 mW
Frequency - Transition
520MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
3-CP
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2156-30A01C-TB-E
ONSONS30A01C-TB-E
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Sanyo 30A01C-TB-E
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 3806
Unit Price: $0.08
Packaging: Bulk
MinMultiplier: 3806
Packaging: Bulk
MinMultiplier: 3806
Substitutes
-