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Part Number Overview
Manufacturer Part Number
TSM1N45CT A3G
Description
MOSFET N-CH 450V 500MA TO92
Detailed Description
N-Channel 450 V 500mA (Tc) 2W (Tc) Through Hole TO-92
Manufacturer
Taiwan Semiconductor Corporation
Standard LeadTime
Edacad Model
Standard Package
2,000
Supplier Stocks
Technical specifications
Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
450 V
Current - Continuous Drain (Id) @ 25°C
500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.25Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id
4.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
235 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
TSM1N45CTA3GDKRINACTIVE
TSM1N45CT B0GCT
TSM1N45CT B0GDKRINACTIVE-ND
TSM1N45CTA3GTB
TSM1N45CTA3GCT
TSM1N45CTA3GCTINACTIVE
TSM1N45CT A3GDKRINACTIVE-ND
TSM1N45CT B0GDKR-ND
TSM1N45CT A3GCT-ND
TSM1N45CT A3GCT
TSM1N45CT A3GTB
TSM1N45CT A3GTB-ND
TSM1N45CT B0GCTINACTIVE-ND
TSM1N45CT B0GDKR
TSM1N45CT A3GCTINACTIVE-ND
TSM1N45CT B0GCT-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Taiwan Semiconductor Corporation TSM1N45CT A3G
Documents & Media
Datasheets
1(TSM1N45)
Environmental Information
()
Quantity Price
-
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