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Part Number Overview
Manufacturer Part Number
IRFHS8242TRPBF
Description
IRFHS8242 - HEXFET POWER MOSFET
Detailed Description
N-Channel 25 V 9.9A (Ta), 21A (Tc) 2.1W (Ta) Surface Mount 6-PQFN (2x2)
Manufacturer
International Rectifier
Standard LeadTime
Edacad Model
Standard Package
1,689
Supplier Stocks
Technical specifications
Mfr
International Rectifier
Series
HEXFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
9.9A (Ta), 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
13mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
10.4 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
653 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2.1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-PQFN (2x2)
Package / Case
6-PowerVDFN
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
ROCIRFIRFHS8242TRPBF
2156-IRFHS8242TRPBF
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/International Rectifier IRFHS8242TRPBF
Documents & Media
Datasheets
1(IRFHS8242PBF Datasheet)
Quantity Price
Quantity: 1689
Unit Price: $0.18
Packaging: Bulk
MinMultiplier: 1689
Packaging: Bulk
MinMultiplier: 1689
Substitutes
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