China
Spain
Rusia
Italy
GermanyRN1112(T5L,F,T)
Part Number Overview
Manufacturer Part Number
RN1112(T5L,F,T)
Description
TRANS PREBIAS NPN 50V 0.1A SSM
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250 MHz
Power - Max
100 mW
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Supplier Device Package
SSM
Base Product Number
RN1112
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
RN1112(T5LFT)CT
RN1112(T5LFT)DKR
RN1112(T5LFT)TR
RN1112T5LFT
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Toshiba Semiconductor and Storage RN1112(T5L,F,T)
Documents & Media
Datasheets
1(RN1112,1113)
Quantity Price
-
Substitutes
-