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Part Number Overview
Manufacturer Part Number
2SC3599E
Description
NPN EPITAXIAL PLANAR SILICON
Detailed Description
Bipolar (BJT) Transistor NPN 120 V 300 mA 500MHz 1.2 W Through Hole TO-126
Manufacturer
Sanyo
Standard LeadTime
Edacad Model
Standard Package
460
Supplier Stocks
Technical specifications
Mfr
Sanyo
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
300 mA
Voltage - Collector Emitter Breakdown (Max)
120 V
Vce Saturation (Max) @ Ib, Ic
600mV @ 7mA, 70mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA, 10V
Power - Max
1.2 W
Frequency - Transition
500MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
0000.00.0000
Other Names
ONSSNY2SC3599E
2156-2SC3599E
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Sanyo 2SC3599E
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 460
Unit Price: $0.65
Packaging: Bulk
MinMultiplier: 460
Packaging: Bulk
MinMultiplier: 460
Substitutes
-