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Part Number Overview
Manufacturer Part Number
IRF6794MTR1PBF
Description
MOSFET N-CH 25V 32A DIRECTFET
Detailed Description
N-Channel 25 V 32A (Ta), 200A (Tc) 2.8W (Ta), 100W (Tc) Surface Mount DIRECTFET™ MX
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
32A (Ta), 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 32A, 10V
Vgs(th) (Max) @ Id
2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4420 pF @ 13 V
FET Feature
Schottky Diode (Body)
Power Dissipation (Max)
2.8W (Ta), 100W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MX
Package / Case
DirectFET™ Isometric MX
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRF6794MTR1PBFCT
IRF6794MTR1PBFTR
SP001531602
IRF6794MTR1PBFDKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6794MTR1PBF
Documents & Media
Datasheets
1(IRF6794M(TR)1PBF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
Product Drawings
1(IR Hexfet Circuit)
Quantity Price
Quantity: 100
Unit Price: $1.6498
Packaging: Cut Tape (CT)
MinMultiplier: 1
Packaging: Cut Tape (CT)
MinMultiplier: 1
Quantity: 10
Unit Price: $1.95
Packaging: Cut Tape (CT)
MinMultiplier: 1
Packaging: Cut Tape (CT)
MinMultiplier: 1
Quantity: 1
Unit Price: $2.28
Packaging: Cut Tape (CT)
MinMultiplier: 1
Packaging: Cut Tape (CT)
MinMultiplier: 1
Substitutes
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