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Part Number Overview
Manufacturer Part Number
NSBC114EPDXVT1G
Description
SS SOT563 DUAL RSTR XSTR
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
5,323
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
10kOhms
Resistor - Emitter Base (R2)
10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
-
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
SOT-563
Base Product Number
NSBC114
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
2156-NSBC114EPDXVT1G
ONSONSNSBC114EPDXVT1G
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/onsemi NSBC114EPDXVT1G
Documents & Media
-
Quantity Price
Quantity: 5323
Unit Price: $0.06
Packaging: Bulk
MinMultiplier: 5323
Packaging: Bulk
MinMultiplier: 5323
Substitutes
-