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HN1B04F(TE85L,F)
Part Number Overview
Manufacturer Part Number
HN1B04F(TE85L,F)
Description
TRANS NPN/PNP 30V 0.5A SM6
Detailed Description
Bipolar (BJT) Transistor Array NPN, PNP 30V 500mA 200MHz 300mW Surface Mount SM6
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
3,000
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Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
NPN, PNP
Current - Collector (Ic) (Max)
500mA
Voltage - Collector Emitter Breakdown (Max)
30V
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 100mA, 1V
Power - Max
300mW
Frequency - Transition
200MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-74, SOT-457
Supplier Device Package
SM6
Base Product Number
HN1B04
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
HN1B04F(TE85LF)TR
HN1B04F(TE85LF)CT
HN1B04F (TE85L,F)
HN1B04F(TE85LF)DKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/Toshiba Semiconductor and Storage HN1B04F(TE85L,F)
Documents & Media
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Quantity Price
-
Substitutes
Part No. : FMB2227A
Manufacturer. : onsemi
Quantity Available. : 75
Unit Price. : $0.51000
Substitute Type. : Similar
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