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Part Number Overview
Manufacturer Part Number
2SK3906(Q)
Description
MOSFET N-CH 600V 20A TO3P
Detailed Description
N-Channel 600 V 20A (Ta) 150W (Tc) Through Hole TO-3P(N)
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
2SK3906(Q) Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
330mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
4250 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P(N)
Package / Case
TO-3P-3, SC-65-3
Base Product Number
2SK3906
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage 2SK3906(Q)
Documents & Media
Datasheets
()
HTML Datasheet
()
EDA Models
1(2SK3906(Q) Models)
Quantity Price
-
Substitutes
Part No. : RJK6015DPK-00#T0
Manufacturer. : Renesas Electronics Corporation
Quantity Available. : 0
Unit Price. : $0.00000
Substitute Type. : Direct
Quantity Available. : 0
Unit Price. : $0.00000
Substitute Type. : Direct