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Part Number Overview
Manufacturer Part Number
STP12N65M2
Description
POWER MOSFET
Detailed Description
N-Channel 650 V 8A (Tc) 85W (Tc) Through Hole TO-220
Manufacturer
STMicroelectronics
Standard LeadTime
99 Weeks
Edacad Model
STP12N65M2 Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
MDmesh™ DM2
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
0V, 10V
Rds On (Max) @ Id, Vgs
500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16.7 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
535 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
85W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
STP12
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STP12N65M2
Documents & Media
Datasheets
1(STP12N65M2)
EDA Models
1(STP12N65M2 Models)
Quantity Price
Quantity: 1000
Unit Price: $0.92914
Packaging: Tube
MinMultiplier: 1000
Packaging: Tube
MinMultiplier: 1000
Substitutes
-