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Part Number Overview
Manufacturer Part Number
FQN1N60CTA
Description
SMALL SIGNAL FIELD-EFFECT TRANSI
Detailed Description
N-Channel 600 V 300mA (Tc) 1W (Ta), 3W (Tc) Through Hole TO-92-3
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
1,461
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11.5Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.2 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
170 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Ta), 3W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
2156-FQN1N60CTA
FAIFSCFQN1N60CTA
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQN1N60CTA
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 1461
Unit Price: $0.21
Packaging: Bulk
MinMultiplier: 1461
Packaging: Bulk
MinMultiplier: 1461
Substitutes
-