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Part Number Overview
Manufacturer Part Number
GA20SICP12-247
Description
TRANS SJT 1200V 45A TO247AB
Detailed Description
1200 V 45A (Tc) 282W (Tc) Through Hole TO-247AB
Manufacturer
GeneSiC Semiconductor
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
GeneSiC Semiconductor
Series
-
Package
Tube
Product Status
Obsolete
FET Type
-
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
50mOhm @ 20A
Vgs(th) (Max) @ Id
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
3091 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
282W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AB
Package / Case
TO-247-3
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/GeneSiC Semiconductor GA20SICP12-247
Documents & Media
Datasheets
1(GA20SICP12-247)
Quantity Price
-
Substitutes
Part No. : GA20SICP12-263
Manufacturer. : GeneSiC Semiconductor
Quantity Available. : 37
Unit Price. : $51.71000
Substitute Type. : Direct
Quantity Available. : 37
Unit Price. : $51.71000
Substitute Type. : Direct