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Part Number Overview
Manufacturer Part Number
FQPF2N60C
Description
POWER FIELD-EFFECT TRANSISTOR, 2
Detailed Description
N-Channel 600 V 2A (Tc) 23W (Tc) Through Hole TO-220F-3
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
501
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
235 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
23W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
ONSONSFQPF2N60C
2156-FQPF2N60C
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQPF2N60C
Documents & Media
Datasheets
1(FQP2N60C Datasheet)
Quantity Price
Quantity: 501
Unit Price: $0.6
Packaging: Bulk
MinMultiplier: 501
Packaging: Bulk
MinMultiplier: 501
Substitutes
-