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Part Number Overview
Manufacturer Part Number
IPB009N03LGATMA1
Description
MOSFET N-CH 30V 180A TO263-7
Detailed Description
N-Channel 30 V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
0.95mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
227 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
25000 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7-3
Package / Case
TO-263-7, D2PAK (6 Leads + Tab)
Base Product Number
IPB009
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPB009N03LGATMA1TR
SP000394657
IPB009N03L GDKR-ND
IPB009N03LGATMA1CT
IPB009N03L GTR
IPB009N03L GCT-ND
IPB009N03L G-ND
IPB009N03L GTR-ND
IPB009N03L G
IPB009N03LG
2156-IPB009N03LGATMA1
IPB009N03L GCT
IPB009N03L GDKR
IPB009N03LGATMA1DKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB009N03LGATMA1
Documents & Media
Datasheets
1(IPB009N03L G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPB009N03L G)
Simulation Models
1(MOSFET OptiMOS™ 30V N-Channel Spice Model)
Quantity Price
-
Substitutes
Part No. : SQM200N04-1M7L_GE3
Manufacturer. : Vishay Siliconix
Quantity Available. : 0
Unit Price. : $3.24000
Substitute Type. : Similar
Quantity Available. : 0
Unit Price. : $3.24000
Substitute Type. : Similar