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Part Number Overview
Manufacturer Part Number
STB150N3LH6
Description
MOSFET N CH 30V 80A D2PAK
Detailed Description
N-Channel 30 V 80A (Tc) 110W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
DeepGATE™, STripFET™ VI
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
STB150N
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
497-13263-6
-497-13263-2
-497-13263-1
-497-13263-6
497-13263-2
497-13263-1
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STB150N3LH6
Documents & Media
Datasheets
1(STB150N3LH6)
PCN Design/Specification
()
Quantity Price
-
Substitutes
Part No. : IPB80N03S4L03ATMA1
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Substitute Type. : Similar
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Substitute Type. : Similar