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Part Number Overview
Manufacturer Part Number
FDR858P
Description
MOSFET P-CH 30V 8A SUPERSOT8
Detailed Description
P-Channel 30 V 8A (Ta) 1.8W (Ta) Surface Mount SuperSOT™-8
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FDR858P Models
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
19mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2010 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SuperSOT™-8
Package / Case
8-LSOP (0.130", 3.30mm Width)
Base Product Number
FDR85
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FDR858P-ND
FDR858PCT
FDR858PDKR
FDR858PTR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FDR858P
Documents & Media
Datasheets
1(FDR858P)
Environmental Information
1(onsemi RoHS)
HTML Datasheet
1(FDR858P)
EDA Models
1(FDR858P Models)
Quantity Price
-
Substitutes
-