China
Spain
Rusia
Italy
Germany2SA1208T
Part Number Overview
Manufacturer Part Number
2SA1208T
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Detailed Description
Bipolar (BJT) Transistor PNP 160 V 70 mA 150MHz 900 mW Through Hole 3-MP
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
1,268
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
70 mA
Voltage - Collector Emitter Breakdown (Max)
160 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 3mA, 30mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 10mA, 5V
Power - Max
900 mW
Frequency - Transition
150MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
3-MP
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2156-2SA1208T
ONSSNY2SA1208T
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SA1208T
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 1268
Unit Price: $0.24
Packaging: Bulk
MinMultiplier: 1268
Packaging: Bulk
MinMultiplier: 1268
Substitutes
-