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Part Number Overview
Manufacturer Part Number
IPS60R650CEAKMA1
Description
CONSUMER
Detailed Description
N-Channel 600 V 9.9A (Tj) 82W (Tc) Through Hole PG-TO251-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9.9A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
20.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
82W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
IPS60R650
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001471280
2156-IPS60R650CEAKMA1
INFINFIPS60R650CEAKMA1
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPS60R650CEAKMA1
Documents & Media
Datasheets
1(IPS60R650CE)
Other Related Documents
1(Part Number Guide)
HTML Datasheet
1(IPS60R650CE)
Quantity Price
-
Substitutes
Part No. : IPS60R600PFD7SAKMA1
Manufacturer. : Infineon Technologies
Quantity Available. : 21
Unit Price. : $0.90000
Substitute Type. : Similar
Quantity Available. : 21
Unit Price. : $0.90000
Substitute Type. : Similar
Part No. : TK8Q65W,S1Q
Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 5
Unit Price. : $1.65000
Substitute Type. : Similar
Quantity Available. : 5
Unit Price. : $1.65000
Substitute Type. : Similar