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NSVEMD4DXV6T5G
Part Number Overview
Manufacturer Part Number
NSVEMD4DXV6T5G
Description
TRANS NPN/PNP DUAL BRT SOT563
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Manufacturer
onsemi
Standard LeadTime
Edacad Model
NSVEMD4DXV6T5G Models
Standard Package
8,000
Supplier Stocks
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Technical specifications
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
47kOhms, 10kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
-
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
SOT-563
Base Product Number
NSVEMD4
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
2832-NSVEMD4DXV6T5GTR
488-NSVEMD4DXV6T5GDKR
488-NSVEMD4DXV6T5GCT
488-NSVEMD4DXV6T5GTR
NSVEMD4DXV6T5G-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/onsemi NSVEMD4DXV6T5G
Documents & Media
Datasheets
1(EMD4DXV6)
Environmental Information
()
PCN Design/Specification
1(Carrier Tape 22/Aug/2017)
PCN Assembly/Origin
1(Mult Dev Assembly Chgs 3/Jul/2020)
HTML Datasheet
1(EMD4DXV6)
EDA Models
1(NSVEMD4DXV6T5G Models)
Quantity Price
Quantity: 56000
Unit Price: $0.08333
Packaging: Tape & Reel (TR)
MinMultiplier: 8000
Quantity: 24000
Unit Price: $0.08866
Packaging: Tape & Reel (TR)
MinMultiplier: 8000
Quantity: 16000
Unit Price: $0.08999
Packaging: Tape & Reel (TR)
MinMultiplier: 8000
Quantity: 8000
Unit Price: $0.09999
Packaging: Tape & Reel (TR)
MinMultiplier: 8000
Substitutes
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