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Part Number Overview
Manufacturer Part Number
BUZ80A
Description
MOSFET N-CH 800V 3.6A TO220AB
Detailed Description
N-Channel 800 V 3.6A (Tc) 100W (Tc) Through Hole TO-220AB
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
BUZ80A Models
Standard Package
500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BUZ80A
Documents & Media
Datasheets
1(BUZ80A)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BUZ80A)
EDA Models
1(BUZ80A Models)
Quantity Price
-
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