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Part Number Overview
Manufacturer Part Number
BDV65
Description
TRANS NPN 60V 12A TO218
Detailed Description
Bipolar (BJT) Transistor NPN 60 V 12 A 60MHz 125 W Through Hole TO-218
Manufacturer
Central Semiconductor Corp
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Central Semiconductor Corp
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
12 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A, 4V
Power - Max
125 W
Frequency - Transition
60MHz
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
TO-218-3
Supplier Device Package
TO-218
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Central Semiconductor Corp BDV65
Documents & Media
Datasheets
1(Power Transistors TO-218 Case General Purpose)
Environmental Information
1(RoHS Cert)
Quantity Price
-
Substitutes
Part No. : 2N6387G
Manufacturer. : onsemi
Quantity Available. : 449
Unit Price. : $1.31000
Substitute Type. : Similar
Quantity Available. : 449
Unit Price. : $1.31000
Substitute Type. : Similar