China
Spain
Rusia
Italy
GermanyNDB6030L
Part Number Overview
Manufacturer Part Number
NDB6030L
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 30 V 52A (Tc) 75W (Tc) Surface Mount TO-263AB
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
175
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
13.5mOhm @ 26A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
75W (Tc)
Operating Temperature
-65°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263AB
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FAIFSCNDB6030L
2156-NDB6030L
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor NDB6030L
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 175
Unit Price: $1.72
Packaging: Bulk
MinMultiplier: 175
Packaging: Bulk
MinMultiplier: 175
Substitutes
-