China
Spain
Rusia
Italy
GermanyIXTA6N100D2HV
Part Number Overview
Manufacturer Part Number
IXTA6N100D2HV
Description
MOSFET N-CH 1000V 6A TO263HV
Detailed Description
N-Channel 1000 V 6A (Tj) 300W (Tc) Surface Mount TO-263HV
Manufacturer
IXYS
Standard LeadTime
52 Weeks
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
Depletion
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
6A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
0V
Rds On (Max) @ Id, Vgs
2.2Ohm @ 3A, 0V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2650 pF @ 10 V
FET Feature
Depletion Mode
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263HV
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IXTA6
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTA6N100D2HV
Documents & Media
Datasheets
1(IXTA6N100D2HV)
Environmental Information
1(Ixys IC REACH)
Quantity Price
Quantity: 300
Unit Price: $11.07623
Packaging: Tube
MinMultiplier: 300
Packaging: Tube
MinMultiplier: 300
Substitutes
-