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Part Number Overview
Manufacturer Part Number
1N5407GHB0G
Description
DIODE GEN PURP 800V 3A DO201AD
Detailed Description
Diode 800 V 3A Through Hole DO-201AD
Manufacturer
Taiwan Semiconductor Corporation
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Bulk
Product Status
Active
Technology
Standard
Voltage - DC Reverse (Vr) (Max)
800 V
Current - Average Rectified (Io)
3A
Voltage - Forward (Vf) (Max) @ If
1 V @ 3 A
Speed
Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
5 µA @ 800 V
Capacitance @ Vr, F
25pF @ 4V, 1MHz
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Supplier Device Package
DO-201AD
Operating Temperature - Junction
-55°C ~ 150°C
Base Product Number
1N5407
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Taiwan Semiconductor Corporation 1N5407GHB0G
Documents & Media
Datasheets
1(1N5400G - 1N5408G)
Environmental Information
()
HTML Datasheet
1(1N5400G - 1N5408G)
Quantity Price
-
Substitutes
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