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Part Number Overview
Manufacturer Part Number
2N5551RL1G
Description
TRANS NPN 160V 0.6A TO92
Detailed Description
Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 625 mW Through Hole TO-92 (TO-226)
Manufacturer
onsemi
Standard LeadTime
Edacad Model
2N5551RL1G Models
Standard Package
2,000
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
600 mA
Voltage - Collector Emitter Breakdown (Max)
160 V
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Power - Max
625 mW
Frequency - Transition
300MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package
TO-92 (TO-226)
Base Product Number
2N5551
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2156-2N5551RL1G-ONTR-ND
2N5551RL1GOSDKRINACTIVE
2N5551RL1GOSDKR-ND
2N5551RL1GOSDKR
ONSONS2N5551RL1G
2N5551RL1G-ND
2156-2N5551RL1G
2N5551RL1GOSTR
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2N5551RL1G
Documents & Media
Datasheets
1(2N5550, 5551)
Environmental Information
()
PCN Obsolescence/ EOL
()
HTML Datasheet
1(2N5550, 5551)
EDA Models
1(2N5551RL1G Models)
Quantity Price
-
Substitutes
Part No. : 2N5551TA
Manufacturer. : onsemi
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Part No. : MMBT5551LT1G
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Substitute Type. : Similar
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Unit Price. : $0.17000
Substitute Type. : Similar