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JAN2N3637
Part Number Overview
Manufacturer Part Number
JAN2N3637
Description
TRANS PNP 175V 1A TO39
Detailed Description
Bipolar (BJT) Transistor PNP 175 V 1 A 1 W Through Hole TO-39 (TO-205AD)
Manufacturer
Microchip Technology
Standard LeadTime
30 Weeks
Edacad Model
Standard Package
1
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Technical specifications
Mfr
Microchip Technology
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
175 V
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
10µA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA, 10V
Power - Max
1 W
Frequency - Transition
-
Operating Temperature
-65°C ~ 200°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/357
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Supplier Device Package
TO-39 (TO-205AD)
Base Product Number
2N3637
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
1086-20890
1086-20890-MIL
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Microchip Technology JAN2N3637
Documents & Media
Datasheets
1(2N3634-37(L,UB))
Environmental Information
()
PCN Assembly/Origin
1(Manufacturing Change 23/Feb/2021)
HTML Datasheet
1(2N3634-37(L,UB))
Quantity Price
Quantity: 100
Unit Price: $10.37
Packaging: Bulk
MinMultiplier: 100
Substitutes
-
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