China
Spain
Rusia
Italy
GermanyIRFH5110TR2PBF
Part Number Overview
Manufacturer Part Number
IRFH5110TR2PBF
Description
MOSFET N-CH 100V 5X6 PQFN
Detailed Description
N-Channel 100 V 11A (Ta), 63A (Tc) Surface Mount 8-PQFN (5x6)
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
400
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs
12.4mOhm @ 37A, 10V
Vgs(th) (Max) @ Id
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3152 pF @ 25 V
FET Feature
-
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN (5x6)
Package / Case
8-PowerVDFN
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001570790
IRFH5110TR2PBFCT
IRFH5110TR2PBFDKR
IRFH5110TR2PBFTR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFH5110TR2PBF
Documents & Media
Datasheets
1(IRFH5110PBF)
Other Related Documents
1(Part Number Guide)
Environmental Information
1(PQFN 5x6 RoHS Compliance)
Featured Product
1(Data Processing Systems)
Simulation Models
1(IRFH5110TR2PBF Saber Model)
Quantity Price
-
Substitutes
Part No. : DMT10H015LFG-7
Manufacturer. : Diodes Incorporated
Quantity Available. : 37,330
Unit Price. : $1.05000
Substitute Type. : Similar
Quantity Available. : 37,330
Unit Price. : $1.05000
Substitute Type. : Similar
Part No. : TPN1600ANH,L1Q
Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 1,395
Unit Price. : $0.85000
Substitute Type. : Similar
Quantity Available. : 1,395
Unit Price. : $0.85000
Substitute Type. : Similar