China
Spain
Rusia
Italy
GermanyMPS3563RLRA
Part Number Overview
Manufacturer Part Number
MPS3563RLRA
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Detailed Description
Bipolar (BJT) Transistor NPN 12 V 50 mA 600MHz 350 mW Through Hole TO-92 (TO-226)
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
6,000
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
50 mA
Voltage - Collector Emitter Breakdown (Max)
12 V
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 8mA, 10V
Power - Max
350 mW
Frequency - Transition
600MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
TO-92 (TO-226)
Base Product Number
MPS356
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2156-MPS3563RLRA
ONSONSMPS3563RLRA
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi MPS3563RLRA
Documents & Media
Datasheets
1(MPS3563)
Quantity Price
Quantity: 6000
Unit Price: $0.05
Packaging: Bulk
MinMultiplier: 6000
Packaging: Bulk
MinMultiplier: 6000
Substitutes
-