China
Spain
Rusia
Italy
GermanyFQB25N33TM
Part Number Overview
Manufacturer Part Number
FQB25N33TM
Description
MOSFET N-CH 330V 25A D2PAK
Detailed Description
N-Channel 330 V 25A (Tc) 3.1W (Ta), 250W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
201
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
330 V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
230mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 15 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2010 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
RoHS Status
Not applicable
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-FQB25N33TM-FSTR
FAIFSCFQB25N33TM
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQB25N33TM
Documents & Media
Datasheets
1(FQB25N33TM)
Quantity Price
Quantity: 201
Unit Price: $1.5
Packaging: Bulk
MinMultiplier: 201
Packaging: Bulk
MinMultiplier: 201
Substitutes
-