China
Spain
Rusia
Italy
GermanyPMN70XP115
Part Number Overview
Manufacturer Part Number
PMN70XP115
Description
P-CHANNEL MOSFET
Detailed Description
P-Channel 20 V 3.1A (Ta) 530mW (Ta), 4.46W (Tc) Surface Mount 6-TSOP
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
4,398
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
88mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id
0.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
530mW (Ta), 4.46W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SC-74, SOT-457
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
NEXNXPPMN70XP115
2156-PMN70XP115
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PMN70XP115
Documents & Media
Datasheets
1(PMN70XP)
HTML Datasheet
1(PMN70XP)
Quantity Price
-
Substitutes
-