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Part Number Overview
Manufacturer Part Number
FF200R12KE3B2HOSA1
Description
IGBT MOD 1200V 295A 1050W
Detailed Description
IGBT Module Half Bridge 1200 V 295 A 1050 W Chassis Mount Module
Manufacturer
Infineon Technologies
Standard LeadTime
26 Weeks
Edacad Model
Standard Package
10
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
-
Package
Tray
Product Status
Active
IGBT Type
-
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
295 A
Power - Max
1050 W
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 200A
Current - Collector Cutoff (Max)
5 mA
Input Capacitance (Cies) @ Vce
14 nF @ 25 V
Input
Standard
NTC Thermistor
No
Operating Temperature
-40°C ~ 125°C
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
FF200R12
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP000100748
FF200R12KE3_B2
FF200R12KE3B2HOSA1-ND
448-FF200R12KE3B2HOSA1
Category
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Infineon Technologies FF200R12KE3B2HOSA1
Documents & Media
Environmental Information
1(RoHS Certificate)
Quantity Price
Quantity: 30
Unit Price: $145.93133
Packaging: Tray
MinMultiplier: 1
Packaging: Tray
MinMultiplier: 1
Quantity: 10
Unit Price: $151.632
Packaging: Tray
MinMultiplier: 1
Packaging: Tray
MinMultiplier: 1
Quantity: 1
Unit Price: $161.89
Packaging: Tray
MinMultiplier: 1
Packaging: Tray
MinMultiplier: 1
Substitutes
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