China
Spain
Rusia
Italy
Germany2SD1684S
Part Number Overview
Manufacturer Part Number
2SD1684S
Description
POWER BIPOLAR TRANSISTOR NPN
Detailed Description
Bipolar (BJT) Transistor NPN 100 V 1.5 A 120MHz 1.5 W Through Hole TO-126ML
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
1,025
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
1.5 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA, 5V
Power - Max
1.5 W
Frequency - Transition
120MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126ML
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
ONSONS2SD1684S
2156-2SD1684S
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SD1684S
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 1025
Unit Price: $0.29
Packaging: Bulk
MinMultiplier: 1025
Packaging: Bulk
MinMultiplier: 1025
Substitutes
-