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Part Number Overview
Manufacturer Part Number
IRF640LPBF
Description
MOSFET N-CH 200V 18A TO262-3
Detailed Description
N-Channel 200 V 18A (Tc) 3.1W (Ta), 130W (Tc) Through Hole TO-262-3
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 130W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IRF640
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRF640LPBF
Documents & Media
Datasheets
1(IRF640S(L)/SIHF640S(L))
HTML Datasheet
1(IRF640S(L)/SIHF640S(L))
Product Drawings
()
Quantity Price
-
Substitutes
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Manufacturer. : Infineon Technologies
Quantity Available. : 798
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Manufacturer. : onsemi
Quantity Available. : 2,296
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Quantity Available. : 40,213
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Manufacturer. : Rohm Semiconductor
Quantity Available. : 1,000
Unit Price. : $1.71000
Substitute Type. : Similar
Quantity Available. : 1,000
Unit Price. : $1.71000
Substitute Type. : Similar