China
Spain
Rusia
Italy
GermanyIXTM50N20
Part Number Overview
Manufacturer Part Number
IXTM50N20
Description
MOSFET N-CH 200V 50A TO204AE
Detailed Description
N-Channel 200 V 50A (Tc) 300W (Tc) Through Hole TO-204AE
Manufacturer
IXYS
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
GigaMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
45mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
220 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-204AE
Package / Case
TO-204AE
Base Product Number
IXTM50
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTM50N20
Documents & Media
Datasheets
1(IXT(H,M)50N20)
PCN Obsolescence/ EOL
1(Mult DEV EOL/OBS 08/Nov/2023)
HTML Datasheet
1(IXT(H,M)50N20)
Quantity Price
-
Substitutes
Part No. : IRFP260NPBF
Manufacturer. : Infineon Technologies
Quantity Available. : 12,032
Unit Price. : $4.04000
Substitute Type. : Similar
Quantity Available. : 12,032
Unit Price. : $4.04000
Substitute Type. : Similar