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Part Number Overview
Manufacturer Part Number
PDTB143EU115
Description
TRANS PREBIAS
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 140 MHz 300 mW Surface Mount SOT-323
Manufacturer
NXP Semiconductors
Standard LeadTime
Edacad Model
Standard Package
8,036
Supplier Stocks
Technical specifications
Mfr
NXP Semiconductors
Series
PDTB1xxxU
Package
Bulk
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
140 MHz
Power - Max
300 mW
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
SOT-323
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2156-PDTB143EU115
NEXNXPPDTB143EU115
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/NXP Semiconductors PDTB143EU115
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
-
Substitutes
-