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Part Number Overview
Manufacturer Part Number
SIHS20N50C-E3
Description
MOSFET N-CH 500V 20A SUPER247
Detailed Description
N-Channel 500 V 20A (Tc) 250mW (Tc) Through Hole SUPER-247™ (TO-274AA)
Manufacturer
Vishay Siliconix
Standard LeadTime
8 Weeks
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
270mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
76 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2942 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
250mW (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
SUPER-247™ (TO-274AA)
Package / Case
TO-274AA
Base Product Number
SIHS20
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHS20N50C-E3
Documents & Media
PCN Design/Specification
1(Mold Compounds 25/Feb/2016)
HTML Datasheet
1(SIHS20N50C(-E3))
Quantity Price
Quantity: 480
Unit Price: $4.80254
Packaging: Tube
MinMultiplier: 480
Packaging: Tube
MinMultiplier: 480
Substitutes
-