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STGW80H65DFB-4
Part Number Overview
Manufacturer Part Number
STGW80H65DFB-4
Description
IGBT BIPO 650V 80A TO247
Detailed Description
IGBT Trench Field Stop 650 V 120 A 469 W Through Hole TO-247-4
Manufacturer
STMicroelectronics
Standard LeadTime
18 Weeks
Edacad Model
STGW80H65DFB-4 Models
Standard Package
Supplier Stocks
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Technical specifications
Mfr
STMicroelectronics
Series
-
Package
Tube
Product Status
Active
IGBT Type
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
120 A
Current - Collector Pulsed (Icm)
240 A
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 80A
Power - Max
469 W
Switching Energy
2.1mJ (on), 1.5mJ (off)
Input Type
Standard
Gate Charge
414 nC
Td (on/off) @ 25°C
84ns/280ns
Test Condition
400V, 80A, 10Ohm, 15V
Reverse Recovery Time (trr)
85 ns
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-4
Supplier Device Package
TO-247-4
Base Product Number
STGW80
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/STMicroelectronics STGW80H65DFB-4
Documents & Media
Datasheets
1(STGW80H65DFB-4)
PCN Assembly/Origin
1(IGBT/IPM TFS A/T Add 22/Oct/2021)
HTML Datasheet
1(STGW80H65DFB-4)
EDA Models
1(STGW80H65DFB-4 Models)
Quantity Price
Quantity: 600
Unit Price: $4.9495
Packaging: Tube
MinMultiplier: 600
Substitutes
-
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