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Part Number Overview
Manufacturer Part Number
FDP100N10
Description
POWER FIELD-EFFECT TRANSISTOR, 7
Detailed Description
N-Channel 100 V 75A (Tc) 208W (Tc) Through Hole TO-220-3
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
159
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
2156-FDP100N10
ONSONSFDP100N10
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDP100N10
Documents & Media
Datasheets
1(FDP100N10 Datasheet)
Quantity Price
Quantity: 159
Unit Price: $1.89
Packaging: Bulk
MinMultiplier: 159
Packaging: Bulk
MinMultiplier: 159
Substitutes
-