China
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GermanyFQAF16N50
Part Number Overview
Manufacturer Part Number
FQAF16N50
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Detailed Description
N-Channel 500 V 11.3A (Tc) 110W (Tc) Through Hole TO-3PF
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
108
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
320mOhm @ 5.65A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PF
Package / Case
TO-3P-3 Full Pack
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
ONSFSCFQAF16N50
2156-FQAF16N50
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQAF16N50
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 108
Unit Price: $2.79
Packaging: Bulk
MinMultiplier: 108
Packaging: Bulk
MinMultiplier: 108
Substitutes
-