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Part Number Overview
Manufacturer Part Number
BSC200P03LSGAUMA1
Description
MOSFET P-CH 30V 9.9/12.5A 8TDSON
Detailed Description
P-Channel 30 V 9.9A (Ta), 12.5A (Tc) 2.5W (Ta), 63W (Tc) Surface Mount PG-TDSON-8-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
5,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
9.9A (Ta), 12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
20mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id
2.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
48.5 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
2430 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 63W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-1
Package / Case
8-PowerTDFN
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
BSC200P03LSG
SP000359668
BSC200P03LS G
BSC200P03LS GINCT-ND
BSC200P03LSGAUMA1CT
BSC200P03LS GINTR-ND
BSC200P03LS GINCT
BSC200P03LS G-ND
BSC200P03LS GINDKR-ND
BSC200P03LS GINDKR
BSC200P03LSGAUMA1TR
BSC200P03LS GINTR
BSC200P03LSGAUMA1DKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSC200P03LSGAUMA1
Documents & Media
Datasheets
1(BSC200P03LS G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSC200P03LS G)
Quantity Price
-
Substitutes
-