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Part Number Overview
Manufacturer Part Number
APTSM120AM25CT3AG
Description
SIC 2N-CH 1200V 148A SP3
Detailed Description
Mosfet Array 1200V (1.2kV) 148A (Tc) 937W Chassis Mount SP3
Manufacturer
Microsemi Corporation
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual), Schottky
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
148A (Tc)
Rds On (Max) @ Id, Vgs
25mOhm @ 80A, 20V
Vgs(th) (Max) @ Id
3V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
544nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
10200pF @ 1000V
Power - Max
937W
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP3
Supplier Device Package
SP3
Base Product Number
APTSM120
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
150-APTSM120AM25CT3AG
APTSM120AM25CT3AG-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Microsemi Corporation APTSM120AM25CT3AG
Documents & Media
Environmental Information
()
Quantity Price
-
Substitutes
-