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Part Number Overview
Manufacturer Part Number
TK040N65Z,S1F
Description
MOSFET N-CH 650V 57A TO247
Detailed Description
N-Channel 650 V 57A (Ta) 360W (Tc) Through Hole TO-247
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
24 Weeks
Edacad Model
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
57A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40mOhm @ 28.5A, 10V
Vgs(th) (Max) @ Id
4V @ 2.85mA
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
6250 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
360W (Tc)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Base Product Number
TK040N65
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
TK040N65Z,S1F(S
TK040N65ZS1F
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TK040N65Z,S1F
Documents & Media
Datasheets
1(TK040N65Z Datasheet)
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