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JAN2N7371
Part Number Overview
Manufacturer Part Number
JAN2N7371
Description
TRANS PNP DARL 100V 0.001A TO254
Detailed Description
Bipolar (BJT) Transistor PNP - Darlington 100 V 1 mA 100 W Through Hole TO-254
Manufacturer
Microchip Technology
Standard LeadTime
Edacad Model
Standard Package
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Technical specifications
Mfr
Microchip Technology
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP - Darlington
Current - Collector (Ic) (Max)
1 mA
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
3V @ 120mA, 12A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 6A, 3V
Power - Max
100 W
Frequency - Transition
-
Operating Temperature
-65°C ~ 200°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/623
Mounting Type
Through Hole
Package / Case
TO-254-3, TO-254AA
Supplier Device Package
TO-254
Environmental & Export Classifications
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Microchip Technology JAN2N7371
Documents & Media
Environmental Information
()
PCN Assembly/Origin
1(Mult Dev Assembly Site 31/Jan/2024)
Quantity Price
-
Substitutes
-
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