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Part Number Overview
Manufacturer Part Number
ULN2803APG,CN
Description
TRANS 8NPN DARL 50V 0.5A 18DIP
Detailed Description
Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 1.47W Through Hole 18-DIP
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
ULN2803APG,CN Models
Standard Package
800
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tube
Product Status
Obsolete
Transistor Type
8 NPN Darlington
Current - Collector (Ic) (Max)
500mA
Voltage - Collector Emitter Breakdown (Max)
50V
Vce Saturation (Max) @ Ib, Ic
1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 350mA, 2V
Power - Max
1.47W
Frequency - Transition
-
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Through Hole
Package / Case
18-DIP (0.300", 7.62mm)
Supplier Device Package
18-DIP
Base Product Number
ULN2803
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
ULN2803APG(O,N,HZN
ULN2803APGONHZN
ULN2803APG(ONHZA-ND
ULN2803APG
ULN2803APG-ND
ULN2803APG(CNHZN)-ND
ULN2803APGCN
ULN2803APG(OM)
ULN2803APG(5,M)
ULN2803APG(OM)-ND
ULN2803APG(ONHZA
ULN2803APG(CNHZN)
ULN2803APG(O,M)
ULN2803APG(O,N,HZA
ULN2803APG(ONHZN
ULN2803APG(ONHZN-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/Toshiba Semiconductor and Storage ULN2803APG,CN
Documents & Media
Datasheets
1(ULN2803, ULN2804 APG/AFWG)
EDA Models
1(ULN2803APG,CN Models)
Quantity Price
-
Substitutes
Part No. : TBD62083APG
Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 0
Unit Price. : $1.46000
Substitute Type. : Similar
Quantity Available. : 0
Unit Price. : $1.46000
Substitute Type. : Similar
Part No. : ULQ2803A
Manufacturer. : STMicroelectronics
Quantity Available. : 5,645
Unit Price. : $2.88000
Substitute Type. : Upgrade
Quantity Available. : 5,645
Unit Price. : $2.88000
Substitute Type. : Upgrade