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Part Number Overview
Manufacturer Part Number
NDD01N60-1G
Description
MOSFET N-CH 600V 1.5A IPAK
Detailed Description
N-Channel 600 V 1.5A (Tc) 46W (Tc) Through Hole IPAK
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
75
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
8.5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
3.7V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
7.2 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
160 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
46W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number
NDD01
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-NDD01N60-1G-ON
ONSONSNDD01N60-1G
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NDD01N60-1G
Documents & Media
Datasheets
1(NDD01N60, NDT01N60)
Environmental Information
()
PCN Obsolescence/ EOL
1(EOL 05/Feb/2016)
HTML Datasheet
1(NDD01N60, NDT01N60)
Quantity Price
-
Substitutes
Part No. : TSM1NB60CH C5G
Manufacturer. : Taiwan Semiconductor Corporation
Quantity Available. : 15,000
Unit Price. : $0.69000
Substitute Type. : Similar
Quantity Available. : 15,000
Unit Price. : $0.69000
Substitute Type. : Similar